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Non-radiative lifetime : ウィキペディア英語版 | Non-radiative lifetime Non-radiative life time is the average time before an electron in the conduction band of a semiconductor recombines with a hole non-radiatively. It is an important parameter in optoelectronics where radiative recombination is required to produce a photon; if the non-radiative life time is shorter than the radiative, then a carrier is more likely to recombine non-radiatively. This results in low internal quantum efficiency.
抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「Non-radiative lifetime」の詳細全文を読む
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